GaN and SiC Devices for Future Power Conversions
GaN HEMT | SiC MOSFET | SiC SBD | GaN and SiC IPMs | WBG Applications
GaN HEMT | SiC MOSFET | SiC SBD | GaN and SiC IPMs | WBG Applications
GaN HEMT (High Electron Mobility Transistors) replaces traditional silicon MOSFETs (especially Super Junction MOS) as main switches in various power electronics applications for the merits of high frequency, high efficiency and low system profiles
Thanks to outstanding device characteristics, GaN is especially suitable for applications such as USB-PD adapters, PC power, Server Power, LED drivers, distributed PVs, 5G base stations, PLC power, POE power, etc. For all of these applications, low profile, high power density and high efficiency can be achieved.
Our SiC MOSFETs and SBDs products are designed and fabricated with state-of-the-art technology and all of them have passed rigorous JEDEC reliability tests for industry and automotive applications
Copyright © 2024 Xiinergy Systems, Inc. - All Rights Reserved.
We use cookies to analyze website traffic and optimize your website experience. By accepting our use of cookies, your data will be aggregated with all other user data.