GaN, SGT MOS and IGBT for Future Power Conversions
GaN HEMT | Low Voltage MOSFET (SGT MOS) | IGBT | GaN IPMs | GaN Applications
GaN HEMT | Low Voltage MOSFET (SGT MOS) | IGBT | GaN IPMs | GaN Applications
GaN HEMT (High Electron Mobility Transistors) replaces traditional silicon MOSFETs (especially Super Junction MOS) as main switches in various power electronics applications for the merits of high frequency, high efficiency and low system profiles
Thanks to outstanding device characteristics, GaN is especially suitable for applications such as USB-PD adapters, PC power, Server Power, LED drivers, distributed PVs, 5G base stations, PLC power, POE power, etc. For all of these applications, low profile, high power density and high efficiency can be achieved.
Our Si Low Voltage MOSFET (SGT MOS) products are designed and fabricated with state-of-the-art technology to work with our GaN HEMT devices as secondary side in power electronics applications
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