X3M120040T4B
Available
N-channel 1200V SiC Power MOSFET
OVERVIEW
XIINERGY's SiC MOSFET family adopts industry-leading silicon carbide technology, delivering higher channel mobility and lower on-resistance, while offering exceptional switching performance and reliability that exceeds automotive-grade requirements.
Its key advantages include:
High-frequency switching capability, significantly reducing the size of passive components.
Higher operating junction temperature, enabling higher power density.
Ultra-low switching and conduction losses, helping systems achieve superior efficiency.
Covering a wide voltage range, this product series is ideal for high-voltage and high-efficiency applications such as NEV traction inverters, OBCs, PV inverters, industrial power supplies, and data-center servers.
PARAMETERS
VDS [V]
1200
IDS[A] @25°C
64
VGS-max [V]
-8/+22
VGS(th)[V] @25°C
2.6
RDS(on)[mΩ] @VGS=18V
40
Qg[nC]
100
Package
TO-247-4
Reliability
Industrial-grade
Status
Available
APPLICATIONS
SiC MOSFETs are well-suited for NEV traction inverters, OBCs, PV inverters, industrial power supplies, and data-center servers. With their high-frequency, high-efficiency, and high-temperature capability, they can significantly improve system efficiency, reduce losses and size, and enhance overall reliability.
Power Tools
Mobility
Marine Electronics Low-Altitude Aviation
Consumer Electronics
AI Computing
